| PART |
Description |
Maker |
| NPS35 |
Improved glass passivation for high reliability
|
Naina Semiconductor ltd.
|
| CR3JM |
LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR12BM |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR12UM |
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR25A BCR25B |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR16HM |
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR10UM |
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR20EY |
HIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR10CY |
HIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR8PM-12 CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
